equipment | Lithography and Wafer Bonding

Raith 150Two E-Beam Pattern Generator


Applications

  • Nanolithography
  • Low Energy Electron Beam Lithography
  • Imaging

Specs

  • Resolution < 5nm
  • Field stitching ~ 25 nm
  • Overlay error ~ ≤ 40nm
  • Environmentally-Controlled Enclosure
  • 0.1-30 keV beam voltage
  • 5 pA to 20 nA beam current
  • 1.6 nm spot size

Allowed User Materials

  • Wafers or wafer pieces (new or previously processed)
  • E-Beam Resist (HSQ, ma-N, PMMA, etc.)
  • Metals
  • Dielectrics

Example Processes:

  • HSQ or ma-N features for nanopillar hardmask definition
  • E-beam resist features to define a diffraction grating structure

Safety Guidlines


Raith SOP
Raith SOP