Applications

• Nanolithography
• Low Energy Electron Beam Lithography
• Imaging

Specs

• Resolution < 5nm
• Field stitching ~ 25 nm
• Overlay error ~ ≤ 40nm
• Environmentally-Controlled Enclosure
• 0.1-30 keV beam voltage
• 5 pA to 20 nA beam current
• 1.6 nm spot size

Allowed User Materials

• Wafers or wafer pieces (new or previously processed)
• E-Beam Resist (HSQ, ma-N, PMMA, etc.)
• Metals
• Dielectrics

Example Processes:

• HSQ or ma-N features for nanopillar hardmask definition
• E-beam resist features to define a diffraction grating structure