NYU Tandon NanoFab Cleanroom
NYU Tandon NanoFab Cleanroom
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Lithography and Wafer Bonding
Raith 150Two E-Beam Pattern Generator
Applications
Nanolithography
Low Energy Electron Beam Lithography
Imaging
Specs
Resolution < 5nm
Field stitching ~ 25 nm
Overlay error ~ ≤ 40nm
Environmentally-Controlled Enclosure
0.1-30 keV beam voltage
5 pA to 20 nA beam current
1.6 nm spot size
Allowed User Materials
Wafers or wafer pieces (new or previously processed)
E-Beam Resist (HSQ, ma-N, PMMA, etc.)
Metals
Dielectrics
Example Processes:
HSQ or ma-N features for nanopillar hardmask definition
E-beam resist features to define a diffraction grating structure
Safety Guidlines
Raith SOP
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Raith SOP
Download