NYU Tandon NanoFab Cleanroom
NYU Tandon NanoFab Cleanroom
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Lithography and Wafer Bonding
Suss MA 6 Contact Aligner
Alignment Modes
Top Side
Back Side
Exposure Modes
Soft Contact
Hard Contact
Vacuum Contact
Low vacuum contact
Flood
Proximity
Specs
Resolution ~ 2.5 µm
Alignment Precision down to 0.5 µm
Light Uniformity ~ 5%
Allowed User Materials
Wafers or wafer pieces (new or previously processed)
Photoresist
Lift-Off Resist
Photomasks
Metals
Dielectrics
Example Processes
Exposure in vacuum contact mode using AZ 9245 resist for a DRIE process
Regular and Flood exposure using AZ 5214 resist for pattern inversion
Hard or Soft contact mode on a wafer piece
Backside alignment for a MEMs process
Regular exposure using AZ 5214 and LOR 3A in a lift-off process
Safety Guidlines
Suss MA 6 Contact Aligner Standard Operating Procedure
SOP
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